Silicon-germanium films deposited by low-frequency plasma-enhanced chemical vapor deposition: Effect of H2 and Ar dilution

A. Kosarev, A. Torres, Y. Hernandez, R. Ambrosio, C. Zuniga, T. E. Felter, R. Asomoza, Y. Kudriavtsev, R. Silva-Gonzalez, E. Gomez-Barojas, A. Ilinski, A. S. Abramov

Resultado de la investigación: Contribución a una revistaArtículo

26 Citas (Scopus)

Resumen

We have studied structure and electrical properties of Si1-YGeY:H films deposited by low-frequency plasma-enhanced chemical vapor deposition over the entire composition range from Y = 0 to Y = 1. The deposition rate of the films and their structural and electrical properties were measured for various ratios of the germane/silane feed gases and with and without dilution by Ar and by H2. Structure and composition was studied by Auger electron spectroscopy (AES), secondary ion mass spectroscopy (SIMS), and Fourier transform infrared (FTIR) spectroscopy. Surface morphology was characterized by atomic force microscopy (AFM). We found that the deposition rate increased with Y, maximizing at Y = 1 without dilution. The relative rate of Ge and Si incorporation is affected by dilution. Hydrogen preferentially bonds to silicon. Hydrogen content decreases for increasing Y. In addition, optical measurements showed that as Y goes for 0 to 1, the Fermi level moves from mid gap to the conduction band edge; i.e., the films become more n-type. No correlation was found between the pre-exponential and the activation energy of conductivity. The behavior of the conductivity γ-factor suggests a local minimum in the density of states at E ≈ 0.33 eV for the films grown with or without H-dilution and E ≈ 0.25 eV for the films with Ar dilution.

Idioma originalInglés
Páginas (desde-hasta)88-104
Número de páginas17
PublicaciónJournal of Materials Research
Volumen21
N.º1
DOI
EstadoPublicada - 1 ene 2006

Huella dactilar

Germanium
Silicon
Plasma enhanced chemical vapor deposition
Dilution
dilution
germanium
vapor deposition
low frequencies
silicon
Deposition rates
Electric properties
electrical properties
Silanes
conductivity
Auger electron spectroscopy
Fermi level
Conduction bands
Chemical analysis
optical measurement
silanes

Citar esto

Kosarev, A., Torres, A., Hernandez, Y., Ambrosio, R., Zuniga, C., Felter, T. E., ... Abramov, A. S. (2006). Silicon-germanium films deposited by low-frequency plasma-enhanced chemical vapor deposition: Effect of H2 and Ar dilution. Journal of Materials Research, 21(1), 88-104. https://doi.org/10.1557/jmr.2006.0013
Kosarev, A. ; Torres, A. ; Hernandez, Y. ; Ambrosio, R. ; Zuniga, C. ; Felter, T. E. ; Asomoza, R. ; Kudriavtsev, Y. ; Silva-Gonzalez, R. ; Gomez-Barojas, E. ; Ilinski, A. ; Abramov, A. S. / Silicon-germanium films deposited by low-frequency plasma-enhanced chemical vapor deposition : Effect of H2 and Ar dilution. En: Journal of Materials Research. 2006 ; Vol. 21, N.º 1. pp. 88-104.
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abstract = "We have studied structure and electrical properties of Si1-YGeY:H films deposited by low-frequency plasma-enhanced chemical vapor deposition over the entire composition range from Y = 0 to Y = 1. The deposition rate of the films and their structural and electrical properties were measured for various ratios of the germane/silane feed gases and with and without dilution by Ar and by H2. Structure and composition was studied by Auger electron spectroscopy (AES), secondary ion mass spectroscopy (SIMS), and Fourier transform infrared (FTIR) spectroscopy. Surface morphology was characterized by atomic force microscopy (AFM). We found that the deposition rate increased with Y, maximizing at Y = 1 without dilution. The relative rate of Ge and Si incorporation is affected by dilution. Hydrogen preferentially bonds to silicon. Hydrogen content decreases for increasing Y. In addition, optical measurements showed that as Y goes for 0 to 1, the Fermi level moves from mid gap to the conduction band edge; i.e., the films become more n-type. No correlation was found between the pre-exponential and the activation energy of conductivity. The behavior of the conductivity γ-factor suggests a local minimum in the density of states at E ≈ 0.33 eV for the films grown with or without H-dilution and E ≈ 0.25 eV for the films with Ar dilution.",
author = "A. Kosarev and A. Torres and Y. Hernandez and R. Ambrosio and C. Zuniga and Felter, {T. E.} and R. Asomoza and Y. Kudriavtsev and R. Silva-Gonzalez and E. Gomez-Barojas and A. Ilinski and Abramov, {A. S.}",
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Kosarev, A, Torres, A, Hernandez, Y, Ambrosio, R, Zuniga, C, Felter, TE, Asomoza, R, Kudriavtsev, Y, Silva-Gonzalez, R, Gomez-Barojas, E, Ilinski, A & Abramov, AS 2006, 'Silicon-germanium films deposited by low-frequency plasma-enhanced chemical vapor deposition: Effect of H2 and Ar dilution', Journal of Materials Research, vol. 21, n.º 1, pp. 88-104. https://doi.org/10.1557/jmr.2006.0013

Silicon-germanium films deposited by low-frequency plasma-enhanced chemical vapor deposition : Effect of H2 and Ar dilution. / Kosarev, A.; Torres, A.; Hernandez, Y.; Ambrosio, R.; Zuniga, C.; Felter, T. E.; Asomoza, R.; Kudriavtsev, Y.; Silva-Gonzalez, R.; Gomez-Barojas, E.; Ilinski, A.; Abramov, A. S.

En: Journal of Materials Research, Vol. 21, N.º 1, 01.01.2006, p. 88-104.

Resultado de la investigación: Contribución a una revistaArtículo

TY - JOUR

T1 - Silicon-germanium films deposited by low-frequency plasma-enhanced chemical vapor deposition

T2 - Effect of H2 and Ar dilution

AU - Kosarev, A.

AU - Torres, A.

AU - Hernandez, Y.

AU - Ambrosio, R.

AU - Zuniga, C.

AU - Felter, T. E.

AU - Asomoza, R.

AU - Kudriavtsev, Y.

AU - Silva-Gonzalez, R.

AU - Gomez-Barojas, E.

AU - Ilinski, A.

AU - Abramov, A. S.

PY - 2006/1/1

Y1 - 2006/1/1

N2 - We have studied structure and electrical properties of Si1-YGeY:H films deposited by low-frequency plasma-enhanced chemical vapor deposition over the entire composition range from Y = 0 to Y = 1. The deposition rate of the films and their structural and electrical properties were measured for various ratios of the germane/silane feed gases and with and without dilution by Ar and by H2. Structure and composition was studied by Auger electron spectroscopy (AES), secondary ion mass spectroscopy (SIMS), and Fourier transform infrared (FTIR) spectroscopy. Surface morphology was characterized by atomic force microscopy (AFM). We found that the deposition rate increased with Y, maximizing at Y = 1 without dilution. The relative rate of Ge and Si incorporation is affected by dilution. Hydrogen preferentially bonds to silicon. Hydrogen content decreases for increasing Y. In addition, optical measurements showed that as Y goes for 0 to 1, the Fermi level moves from mid gap to the conduction band edge; i.e., the films become more n-type. No correlation was found between the pre-exponential and the activation energy of conductivity. The behavior of the conductivity γ-factor suggests a local minimum in the density of states at E ≈ 0.33 eV for the films grown with or without H-dilution and E ≈ 0.25 eV for the films with Ar dilution.

AB - We have studied structure and electrical properties of Si1-YGeY:H films deposited by low-frequency plasma-enhanced chemical vapor deposition over the entire composition range from Y = 0 to Y = 1. The deposition rate of the films and their structural and electrical properties were measured for various ratios of the germane/silane feed gases and with and without dilution by Ar and by H2. Structure and composition was studied by Auger electron spectroscopy (AES), secondary ion mass spectroscopy (SIMS), and Fourier transform infrared (FTIR) spectroscopy. Surface morphology was characterized by atomic force microscopy (AFM). We found that the deposition rate increased with Y, maximizing at Y = 1 without dilution. The relative rate of Ge and Si incorporation is affected by dilution. Hydrogen preferentially bonds to silicon. Hydrogen content decreases for increasing Y. In addition, optical measurements showed that as Y goes for 0 to 1, the Fermi level moves from mid gap to the conduction band edge; i.e., the films become more n-type. No correlation was found between the pre-exponential and the activation energy of conductivity. The behavior of the conductivity γ-factor suggests a local minimum in the density of states at E ≈ 0.33 eV for the films grown with or without H-dilution and E ≈ 0.25 eV for the films with Ar dilution.

UR - http://www.scopus.com/inward/record.url?scp=33644522393&partnerID=8YFLogxK

U2 - 10.1557/jmr.2006.0013

DO - 10.1557/jmr.2006.0013

M3 - Artículo

AN - SCOPUS:33644522393

VL - 21

SP - 88

EP - 104

JO - Journal of Materials Research

JF - Journal of Materials Research

SN - 0884-2914

IS - 1

ER -