Electrical percolation threshold evaluation of silver thin films for multilayer WO3/Ag/WO3 transparent conductive oxide

R. Hernández Castillo, F. Peñuñuri, D. Canto-Reyes, Alicia Borges Pool, J. A. Mendez-Gamboa, M. Acosta

Resultado de la investigación: Contribución a una revistaArtículo

Resumen

In this work, we developed an algorithm capable of identifying the electrical percolation threshold from AFM images of silver (Ag) thin films with different thickness. The percolation threshold was first determined experimentally using electrical measurements. Subsequently, the AFM images, film thicknesses, and conductivity values were fed to the algorithm to correlate the morphology from the AFM images and determine the existence of electrical conductivity. Then, the algorithm was calibrated using the threshold values found experimentally. Finally, the minimum thickness necessary for electrical percolation of silver thin films was determined to be around 7 nm. This methodology eliminates the urgency to carry out electrical measurements once the morphological ones are available, providing a criterion that allows to decide whether a film is suitable for its use as an intermediate layer in multilayer TCOs. To validate these results, indium free room temperature TCOs multilayer WO3/Ag /WO3 were grown and the Haacke figure of merit (FOM) were calculated. A good quality WO3-based TCO was obtained with a FOM value of 1.11 × 10−2 Ω−1 for WO3(10 nm)/Ag(7 nm)/WO3(20 nm).

Idioma originalInglés
Número de artículo126913
PublicaciónMaterials Letters
Volumen260
DOI
EstadoPublicada - 1 feb 2020

Huella dactilar

Silver
Oxides
Multilayers
silver
atomic force microscopy
figure of merit
Thin films
electrical measurement
thresholds
oxides
evaluation
thin films
Indium
indium
Film thickness
film thickness
methodology
conductivity
electrical resistivity
room temperature

Citar esto

Castillo, R. Hernández ; Peñuñuri, F. ; Canto-Reyes, D. ; Borges Pool, Alicia ; Mendez-Gamboa, J. A. ; Acosta, M. / Electrical percolation threshold evaluation of silver thin films for multilayer WO3/Ag/WO3 transparent conductive oxide. En: Materials Letters. 2020 ; Vol. 260.
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abstract = "In this work, we developed an algorithm capable of identifying the electrical percolation threshold from AFM images of silver (Ag) thin films with different thickness. The percolation threshold was first determined experimentally using electrical measurements. Subsequently, the AFM images, film thicknesses, and conductivity values were fed to the algorithm to correlate the morphology from the AFM images and determine the existence of electrical conductivity. Then, the algorithm was calibrated using the threshold values found experimentally. Finally, the minimum thickness necessary for electrical percolation of silver thin films was determined to be around 7 nm. This methodology eliminates the urgency to carry out electrical measurements once the morphological ones are available, providing a criterion that allows to decide whether a film is suitable for its use as an intermediate layer in multilayer TCOs. To validate these results, indium free room temperature TCOs multilayer WO3/Ag /WO3 were grown and the Haacke figure of merit (FOM) were calculated. A good quality WO3-based TCO was obtained with a FOM value of 1.11 × 10−2 Ω−1 for WO3(10 nm)/Ag(7 nm)/WO3(20 nm).",
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Electrical percolation threshold evaluation of silver thin films for multilayer WO3/Ag/WO3 transparent conductive oxide. / Castillo, R. Hernández; Peñuñuri, F.; Canto-Reyes, D.; Borges Pool, Alicia; Mendez-Gamboa, J. A.; Acosta, M.

En: Materials Letters, Vol. 260, 126913, 01.02.2020.

Resultado de la investigación: Contribución a una revistaArtículo

TY - JOUR

T1 - Electrical percolation threshold evaluation of silver thin films for multilayer WO3/Ag/WO3 transparent conductive oxide

AU - Castillo, R. Hernández

AU - Peñuñuri, F.

AU - Canto-Reyes, D.

AU - Borges Pool, Alicia

AU - Mendez-Gamboa, J. A.

AU - Acosta, M.

PY - 2020/2/1

Y1 - 2020/2/1

N2 - In this work, we developed an algorithm capable of identifying the electrical percolation threshold from AFM images of silver (Ag) thin films with different thickness. The percolation threshold was first determined experimentally using electrical measurements. Subsequently, the AFM images, film thicknesses, and conductivity values were fed to the algorithm to correlate the morphology from the AFM images and determine the existence of electrical conductivity. Then, the algorithm was calibrated using the threshold values found experimentally. Finally, the minimum thickness necessary for electrical percolation of silver thin films was determined to be around 7 nm. This methodology eliminates the urgency to carry out electrical measurements once the morphological ones are available, providing a criterion that allows to decide whether a film is suitable for its use as an intermediate layer in multilayer TCOs. To validate these results, indium free room temperature TCOs multilayer WO3/Ag /WO3 were grown and the Haacke figure of merit (FOM) were calculated. A good quality WO3-based TCO was obtained with a FOM value of 1.11 × 10−2 Ω−1 for WO3(10 nm)/Ag(7 nm)/WO3(20 nm).

AB - In this work, we developed an algorithm capable of identifying the electrical percolation threshold from AFM images of silver (Ag) thin films with different thickness. The percolation threshold was first determined experimentally using electrical measurements. Subsequently, the AFM images, film thicknesses, and conductivity values were fed to the algorithm to correlate the morphology from the AFM images and determine the existence of electrical conductivity. Then, the algorithm was calibrated using the threshold values found experimentally. Finally, the minimum thickness necessary for electrical percolation of silver thin films was determined to be around 7 nm. This methodology eliminates the urgency to carry out electrical measurements once the morphological ones are available, providing a criterion that allows to decide whether a film is suitable for its use as an intermediate layer in multilayer TCOs. To validate these results, indium free room temperature TCOs multilayer WO3/Ag /WO3 were grown and the Haacke figure of merit (FOM) were calculated. A good quality WO3-based TCO was obtained with a FOM value of 1.11 × 10−2 Ω−1 for WO3(10 nm)/Ag(7 nm)/WO3(20 nm).

KW - Haacke figure of merit

KW - Optoelectronic properties

KW - Percolation threshold

KW - Transparent conductive oxide

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