Effect of the impact ionization of deep traps on the field distribution in planar thin-film GaAs structures

Yevgen Prokhorov, Jesus González-Hernández, Nikolai B. Gorev, Inna F. Kodzhespirova, Yury A. Kovalenko

Resultado de la investigación: Contribución a una revistaArtículo

Resumen

The distribution of the electric field in planar GaAs structures made up of a thin film and semi-insulating compensated substrate is considered allowing for the impact ionization of deep traps in the substrate near the film-substrate interface. It is shown that there exists a critical film thickness below which the impact ionization of deep traps can make the film exhibit a long-length region of a uniform electric field exceeding the threshold of N-type negative differential mobility without recourse to special doping profiles.

Idioma originalInglés
Páginas (desde-hasta)327-331
Número de páginas5
PublicaciónJournal of Applied Physics
Volumen89
N.º1
DOI
EstadoPublicada - 1 ene 2001

Huella dactilar

traps
ionization
thin films
electric fields
planar structures
film thickness
thresholds
profiles

Citar esto

Prokhorov, Yevgen ; González-Hernández, Jesus ; Gorev, Nikolai B. ; Kodzhespirova, Inna F. ; Kovalenko, Yury A. / Effect of the impact ionization of deep traps on the field distribution in planar thin-film GaAs structures. En: Journal of Applied Physics. 2001 ; Vol. 89, N.º 1. pp. 327-331.
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Effect of the impact ionization of deep traps on the field distribution in planar thin-film GaAs structures. / Prokhorov, Yevgen; González-Hernández, Jesus; Gorev, Nikolai B.; Kodzhespirova, Inna F.; Kovalenko, Yury A.

En: Journal of Applied Physics, Vol. 89, N.º 1, 01.01.2001, p. 327-331.

Resultado de la investigación: Contribución a una revistaArtículo

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AU - González-Hernández, Jesus

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AU - Kovalenko, Yury A.

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