A comparative analysis of synthesizing Gallium Nitride films: On Gallium Arsenide and Sapphire substrates

C. Guarneros, H. Vilchis, V. M. Sánchez, Arturo Escobosa Echavarria

Resultado de la investigación: Capítulo del libro/informe/acta de congresoContribución a la conferencia

Resumen

The characteristics of gallium nitride (GaN) films growth on gallium arsenide (GaAs) and sapphire (Al 2O 3) by Metal-organic vapor phase epitaxy (MOVPE) system are presented. Comparing the results we can saw the advantages and disadvantages of use one or other substrate in order to And the best experimental conditions for obtain c-GaN films with good properties.

Idioma originalInglés
Título de la publicación alojada2008 5th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2008
Páginas478-480
Número de páginas3
DOI
EstadoPublicada - 1 dic 2008
Evento2008 5th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2008 - Mexico City, México
Duración: 12 nov 200814 nov 2008

Otros

Otros2008 5th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2008
PaísMéxico
CiudadMexico City
Período12/11/0814/11/08

Huella dactilar

Gallium nitride
Gallium arsenide
Sapphire
Vapor phase epitaxy
Film growth
Substrates
Metals

Citar esto

Guarneros, C., Vilchis, H., Sánchez, V. M., & Escobosa Echavarria, A. (2008). A comparative analysis of synthesizing Gallium Nitride films: On Gallium Arsenide and Sapphire substrates. En 2008 5th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2008 (pp. 478-480). [4723459] https://doi.org/10.1109/ICEEE.2008.4723459
Guarneros, C. ; Vilchis, H. ; Sánchez, V. M. ; Escobosa Echavarria, Arturo. / A comparative analysis of synthesizing Gallium Nitride films : On Gallium Arsenide and Sapphire substrates. 2008 5th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2008. 2008. pp. 478-480
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Guarneros, C, Vilchis, H, Sánchez, VM & Escobosa Echavarria, A 2008, A comparative analysis of synthesizing Gallium Nitride films: On Gallium Arsenide and Sapphire substrates. En 2008 5th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2008., 4723459, pp. 478-480, 2008 5th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2008, Mexico City, México, 12/11/08. https://doi.org/10.1109/ICEEE.2008.4723459

A comparative analysis of synthesizing Gallium Nitride films : On Gallium Arsenide and Sapphire substrates. / Guarneros, C.; Vilchis, H.; Sánchez, V. M.; Escobosa Echavarria, Arturo.

2008 5th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2008. 2008. p. 478-480 4723459.

Resultado de la investigación: Capítulo del libro/informe/acta de congresoContribución a la conferencia

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Guarneros C, Vilchis H, Sánchez VM, Escobosa Echavarria A. A comparative analysis of synthesizing Gallium Nitride films: On Gallium Arsenide and Sapphire substrates. En 2008 5th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2008. 2008. p. 478-480. 4723459 https://doi.org/10.1109/ICEEE.2008.4723459